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Plasma Etching is used for devices defining steps. In plasma dielectric etching it is important to control the plasma chemistry in order to balance etching, depostion and sputtering species in such way to be able to slectively etch only some of materials and to be able to unisotropically produce vertical profiles.
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Sifren® 46 (E) |
Sifren® 46 (C4F6 or Hexafluorobutadiene) C4F6 has a GWP=0 and it is the most advanced etching gas for critical applications. Its low C/F ratio and its insaturations allow achieving the highest aspect ratios in etching
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Sulphur Hexafluoride SF6 (C)electronic grade 5.0 |
Sulphur Hexafluoride electronic grade
SF6 is the most price competitive source of fluorine. It can be profitably used for cleaning and for etching. If used properly, it is possible to limit the emissions of your processes at very low levels.
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